@article{oai:nagasaki-u.repo.nii.ac.jp:00010353,
 author = {Ninomiya, Tamotsu and Fukui, Akiyoshi and Mino, Masato and Yamasaki, Mikio and Tanaka, Yasunori and Ohashi, Hiromichi},
 journal = {2011 1st International Conference on Electric Power Equipment - Switching Technology (ICEPE-ST)},
 month = {Oct},
 note = {SiC power devices have attracted attention as the next-generation semiconductor devices that surpass silicon devices. The SiC has some superior physical properties when compared with the conventional silicon, and is expected to operate with lower on-resistance and under higher temperature. Furthermore the SiC device has higher thermal conductivity and then has the prominent feature of heat dissipation. Among many expected applications of SiC, this paper presents the application to the power supply system for the information and communication system such as a data center. Firstly, the development of a high power-density technology for a 5-kW isolated DC-DC converter using a hybrid-pair of Si-MOSFET and SiC-SBD is reported. Secondly, a new type DC circuit breaker using SiC-SIT is introduced., 2011 1st International Conference on Electric Power Equipment - Switching Technology (ICEPE-ST), pp.421-426; 2011},
 pages = {421--426},
 title = {HVDC system for a data center equipped with SiC power devices},
 year = {2011}
}