@article{oai:nagasaki-u.repo.nii.ac.jp:00011103,
 author = {森村, 隆夫},
 issue = {78},
 journal = {長崎大学大学院工学研究科研究報告, Reports of Graduate School of Engineering, Nagasaki University},
 month = {Jan},
 note = {In a Bloch-wave-based scanning transmission electron microscope (STEM) image simulation, a framework for calculating the cross section for any incoherent scattering process was formulated by Allen et al. They simulated the HAADF, BSE, EELS and EDX STEM images from the inelastic scattering coefficients. Furthermore, a skilful approach for deriving the excitation amplitude and block diagonalization in the eigenvalue equation were employed to reduce the computing time and memory. In the present work, we extend their scheme to a layer-by-layer representation for application to inhomogeneous crystals that include precipitates and atomic displacement. Calculations for a multi-layer of Si-Sb-Si were performed by multiplying Allen et al.’s block-diagonalized matrices. Electron intensities within the sample and EDX STEM images were calculated at various conditions. From the calculations, 3-dimensional STEM analysis was considered., 長崎大学大学院工学研究科研究報告, 42(78), pp.16-22; 2012},
 pages = {16--22},
 title = {行列表示によるＳＴＥＭ像シミュレーション法の開発},
 volume = {42},
 year = {2012}
}