@inproceedings{oai:nagasaki-u.repo.nii.ac.jp:00013053,
 author = {Shindo, Ryota and Iwata, Tadashi and Hirashima, Akinori and Shinohara, Masanori and Matsuda, Yoshinobu},
 book = {TENCON 2010 - 2010 IEEE Region 10 Conference},
 month = {Nov},
 note = {Aluminum-doped zinc oxide (AZO) is one of the promising transparent conductive oxide materials, which is expected to be an alternative to tin-doped indium oxide (ITO) that for long has been widely used in industry. The authors have been engaged in the development of AZO deposition process using inductively-coupled plasma assisted sputtering in a couple of years. This paper reports the results showing effectiveness of inductively coupled plasma (ICP) assisted sputtering in AZO film deposition process., 2010 IEEE Region 10 Conference (TENCON 2010) : Fukuoka, 2010.11.21-2010.11.24, TENCON 2010, pp.1002-1006; 2010},
 pages = {1002--1006},
 publisher = {IEEE},
 title = {Deposition of transparent conducting Al-doped ZnO thin films by ICP-assisted sputtering},
 year = {2010}
}