@article{oai:nagasaki-u.repo.nii.ac.jp:00014073,
 author = {Morimura, Takao},
 issue = {1},
 journal = {Journal of Electron Microscopy},
 month = {Aug},
 note = {In a Bloch-wave-based STEM image simulation, a framework for calculating the cross section for any incoherent scattering process was formulated by Allen et al. [(2003) Lattice-resolution contrast from a focused coherent electron probe. Part I. Ultramicroscopy 96: 47-63; Part II. ibid. 96: 65-81]. They simulated the high-angle annular dark-field, back-scattered electron, electron energy-loss spectroscopy and energy-dispersive X-ray (EDX) STEM images from the inelastic scattering coefficients. Furthermore, a skilful approach for deriving the excitation amplitude and block diagonalization in the eigenvalue equation was employed to reduce computing time and memory. In the present work, I extended their scheme to a layer-by-layer representation for application to inhomogeneous crystals. Calculations for a multi-layer Si sample including a displaced layer were performed by multiplying Allen et al.'s block-diagonalized matrices. Electron intensities within the sample and EDX STEM images were calculated at various conditions. From the calculations, three-dimensional STEM analysis was considered., Journal of Electron Microscopy, 59(1), pp.S23-S28; 2010},
 pages = {S23--S28},
 title = {STEM image simulation by Bloch-wave method with layer-by-layer representation.},
 volume = {59},
 year = {2010}
}