@article{oai:nagasaki-u.repo.nii.ac.jp:00014332,
 author = {羽坂, 雅之 and 古瀬, 辰治 and 渡辺, 哲也 and 内山, 休男 and 古賀, 秀人},
 issue = {34},
 journal = {長崎大学工学部研究報告, Reports of the Faculty of Engineering, Nagasaki University},
 month = {Jan},
 note = {With a secondary-ion micro-analyser (IMA), diffusion coefficients of Cu and Al in polycrystalline Ni were investigated for temperatures ranging from 1269K to 723K, namely from 0.72 Tm to 0.42 Tm, where Tm is a melting point of Ni. The activation energies and the frequency factors of lattice diffusion observed at high temperature were: - Qi = 256kj/mol, D0 = 0.52cm2/s above 919K for Cu, - Qi = 244kj/mol, D0 = 0.24cm2/s above 938K for Al. These activation energies agreed well with the values which were theoretically estimated from energies of vacancy formation and atom migration. The activation energies and the frequency factors of the short circuit diffusion observed at low temperature were: - Qi = 67kj/mol, D0 = 1.4 × 10-11cm2/s below 872K for Cu, - Qi = 90kj/mol, D0 = 1.2×10-9cm2/s below 919K for Al., 長崎大学工学部研究報告, 20(34), pp.59-64; 1990},
 pages = {59--64},
 title = {IMAによるNi中Cu，Alの拡散係数の研究},
 volume = {20},
 year = {1990}
}