@article{oai:nagasaki-u.repo.nii.ac.jp:00014443,
 author = {城戸, 拓也 and 阿野, 一巳 and 白方, 一浩 and 松田, 良信},
 issue = {42},
 journal = {長崎大学工学部研究報告, Reports of the Faculty of Engineering, Nagasaki University},
 month = {Jan},
 note = {We have investigated the reactive sputtering of Indium-Tin-Oxide(ITO) in a dc glow discharge. Spatial distributions of absolute density of sputtered indium atoms were measured by the laser induced fluorescence spectroscopy. The maximum value of the indium density was 1011cm-3 for the case of pure argon dc discharge at the pressure of 0.2 Torr and the discharge voltage of 800 V., 長崎大学工学部研究報告, 24(42), pp.51-58; 1994},
 pages = {51--58},
 title = {レーザー誘起蛍光法による反応性スパッタリング中の中性インジウム原子密度計測},
 volume = {24},
 year = {1994}
}