@article{oai:nagasaki-u.repo.nii.ac.jp:00015655,
 author = {岩永, 浩 and 柴田, 昇 and 勝木, 宏昭 and 江頭, 誠},
 issue = {1092},
 journal = {窯業協會誌, Journal of the Ceramic Association, Japan},
 month = {Aug},
 note = {β-SiC whiskers were grown at about 1300℃ by the reaction of silicon powder and propylene in a flowing hydrogen atmosphere containing a few percent of hydrogen sulfide.  The whiskers with the growth direction [111] were examined by TEM and SEM.  Stacking faults observed in the whisker are classified into two types; one has the (111) fault plane perpendicular to the growth direction and the other has fault planes parallel to the (111), (111) and (111) which are not perpendicular to the growth direction.  It is likely that these two types of faults have a correlation with the difference in morphology of whiskers.  Their fault vector was shown to be 1/3<111> by the g･b=0 criterion., 窯業協会誌, 94(1092), pp.900-902; 1986},
 pages = {900--902},
 title = {β-SiCウイスカー中の積層欠陥},
 volume = {94},
 year = {1986}
}