@article{oai:nagasaki-u.repo.nii.ac.jp:00016427,
 author = {Morimura, Takao and Hasaka, Masayuki},
 issue = {9},
 journal = {Ultramicroscopy},
 month = {Aug},
 note = {In a dynamical STEM image simulation by the Bloch-wave method, Allen et al. formulated a framework for calculating the cross-section for any incoherent scattering process from the inelastic scattering coefficients: thermal diffuse scattering (TDS) for high-angle annular dark-field (HAADF) and back-scattered electron (BSE) STEM, and ionization for electron energy-loss spectroscopy (EELS) and energy-dispersive X-ray spectroscopy (EDX) STEM. Furthermore, their method employed a skillfull approach for deriving the excitation amplitude and block diagonalization in the eigenvalue equation. In the present work, we extend their scheme to a layer-by-layer representation for application to inhomogeneous crystals that include precipitates, defects and atomic displacement. Calculations for a multi-layer sample of Si-Sb-Si were performed by multiplying Allen et al.'s block-diagonalized matrices. Electron intensities within the sample and EDX STEM images, as an example of the inelastic scattering, were calculated at various conditions. From the calculations, 3-dimensional STEM analysis was considered., Ultramicroscopy, 109(9), pp.1203-1209; 2009},
 pages = {1203--1209},
 title = {Bloch-wave-based STEM image simulation with layer-by-layer representation.},
 volume = {109},
 year = {2009}
}