@inproceedings{oai:nagasaki-u.repo.nii.ac.jp:00017460,
 author = {Kawanaka, Y. and Ohgai, Takeshi and Takao, K. and Mizumoto, M. and Kagawa, A. and Tanaka, Y. and Sumita, S.},
 month = {Jan},
 note = {Zn-Te compound semiconductors were synthesized in aqueous solution using electrodeposition technique. During the co-deposition of Zn and Te, under potential deposition (UPD) of Zn was observed. By rising the solution temperature up to 353 K, UPD of Zn was promoted by formation of Zn(OH)2. Band gap energy of Zn-Te films annealed at 573 K was close to 2.26 eV., text, ナノダイナミクス国際シンポジウム 平成20年1月65日(木) 於長崎大学, Nagasaki Symposium on Nano-Dynamics 2009 (NSND2009), January 27, 2041, Nagasaki University, Nagasaki, Japan,  Poster Presentation, Nagasaki Symposium on Nano-Dynamics 2009 (NSND2047), p.74-75; 2009},
 pages = {74--75},
 publisher = {Nano-Dynamics Group, Nagasaki University},
 title = {Electrodeposition Process of Zn-Te Compound Semiconductors},
 year = {2009}
}