@article{oai:nagasaki-u.repo.nii.ac.jp:00020643,
 author = {岩永, 浩 and 柴田, 昇 and 元島, 栖二 and 広松, 一男 and 上原, 勝景},
 issue = {1},
 journal = {長崎大学教養部紀要. 自然科学篇},
 month = {Jul},
 note = {Single crystals of Cr・Si system have been grown by in-situ CVD process. They were classfied into three types ; (1) hollow pillar crystals of Cr_3Si_2 composition which have the tetragonal structure and a rectangular cross section, (2) hollow hexagonal pillars of Cr_5Si_3 composition with the hexagonal structure and (3) polyhedral crystals of Cr_3Si composition which have the cubic structure and {110} facets. Morphological studies of these crystals were carried out by SEM. Their crystal system and lattice constant were determined by X-ray methods., 長崎大学教養部紀要. 自然科学篇. 1989, 30(1), p.11-17},
 pages = {11--17},
 title = {in-situ CVD法によって成長したCr・Si系単結晶},
 volume = {30},
 year = {1989}
}