@inproceedings{oai:nagasaki-u.repo.nii.ac.jp:00022480,
 author = {Kawanaka, Y. and Mizumoto, M. and Ohgai, Takeshi and Kagawa, A. and Takao, K. and Tanaka, Y. and Sumita, S.},
 book = {Nagasaki Symposium on Nano-Dynamics 2008 (NSND2008)},
 month = {Jan},
 note = {application/pdf, Zinc-telluride compound semiconductors were electrodeposited from acidic aqueous solution. Under potential deposition (UPD) of zinc was observed during the co-deposition of zinc and tellurium. UPD of zinc was promoted by rising the solution temperature up to 353K. Band gap energy of annealed zinc-telluride films with almost ideal stoichiometric composition (Zn:Te=1:1) were close to 2.26 eV., text, Nagasaki Symposium on Nano-Dynamics 2008 (NSND2008) 平成20年1月29日(火)於長崎大学 Poster Presentation, Nagasaki Symposium on Nano-Dynamics 2008 (NSND2008), pp.61-62},
 pages = {61--62},
 title = {Electrodeposition of Zinc-Telluride Compound Semiconductors},
 year = {2008}
}