{"created":"2023-05-15T16:47:13.516282+00:00","id":23806,"links":{},"metadata":{"_buckets":{"deposit":"d8f49d2e-eeae-4b86-9f5b-bffd455280c0"},"_deposit":{"created_by":2,"id":"23806","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"23806"},"status":"published"},"_oai":{"id":"oai:nagasaki-u.repo.nii.ac.jp:00023806","sets":["18:105:117:1672"]},"author_link":["100463","100461","100462"],"item_3_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"In Diffusion in Compound Semiconductor of ZnSe - 1"}]},"item_3_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1999-06","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"21","bibliographicPageStart":"11","bibliographicVolumeNumber":"61","bibliographic_titles":[{"bibliographic_title":"長崎大学教育学部紀要. 自然科学"}]}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"II-VI属化合物半導体ZnSe(Eg=2.68eV)の結晶評価の一環としてIn不純物の熱拡散を行い, カソードルミネスセンセンス(CL)法を使って不純物準位測定を試みた。In拡散源にはInCl_3(3N)とIn(6N)の2種を用い, ZnSe単結晶基板(6N), ドーパントInを石英アンプルに真空封入して熱拡散を行った。また, 比較用にZn(6N)雰囲気で熱処理した試料も準備した。電子線源には走査型電子顕微鏡を用い, 電子線の加速電圧=25kV, 吸収電流=1∿6×(10)^<-9>A, 試料への照射電子線経は約1μm^2である。拡散済みZnSe基板は劈開し, 劈開断面に電子線を照射してIn拡散が行われた場所(記号S)と中心部の未拡散場所(記号C)について2.5nmステップで400∿800nmの波長範囲を室温で測定した。ドーパントにInCl_3を用いた場合, CL発光強度は弱く, 拡散層は厚く, 不純物の拡散速度が速い(600℃, 4∿8×(10)^<-8>cm/sec)。CL発光は, (1) : 462.5nm (バンド間遷移), (2) : 547.5nm (Cuドナー-充満帯間遷移, (Cu-Green), (3) : 615.0nm (伝導帯-Cuアクセプタ間遷移, (Cu-Red), (4) : ∿680nm (V_(0.1eV)-I_ (0.65eV)またはCl(0.19∿0.21eV)-Cu(0.65eV)間遷移)が観察された。これは, 使用したドーパントInCl_3(3N)の純度が不足し, 残留不純物としてのCuの効果が大きいことが分かった。ドーパントIn(6N)場合は, CL発光強度は全体に強く, 拡散層は薄い。拡散速度は600℃で3∿4×(10)^<-10>cm/secである。CLスペクトルから, 前者と同様に (1), (2), (3), (4)が観察された。純度6Nでも基板の残留不純物や拡散用容器などからのCu汚染があることを示している。","subitem_description_type":"Abstract"}]},"item_3_description_64":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"長崎大学教育学部紀要. 教育科学. vol.64, p.13-27; 2003@@@長崎大学教育学部紀要. 自然科学. vol.61, p.11-21; 1999","subitem_description_type":"Other"}]},"item_3_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"100463","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Takenoshita, Hiroshi"}]}]},"item_3_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11330079","subitem_source_identifier_type":"NCID"}]},"item_3_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13451359","subitem_source_identifier_type":"ISSN"}]},"item_3_text_62":{"attribute_name":"sortkey","attribute_value_mlt":[{"subitem_text_value":"P00011-P00021"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"竹野下, 寛"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-12-24"}],"displaytype":"detail","filename":"KJ00000045773.pdf","filesize":[{"value":"735.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00000045773.pdf","url":"https://nagasaki-u.repo.nii.ac.jp/record/23806/files/KJ00000045773.pdf"},"version_id":"5c220425-3894-4a0a-b70e-0fac88284be7"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"化合物半導体ZnSeへのIn拡散 - 1","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"化合物半導体ZnSeへのIn拡散 - 1"}]},"item_type_id":"3","owner":"2","path":["1672"],"pubdate":{"attribute_name":"公開日","attribute_value":"2007-02-08"},"publish_date":"2007-02-08","publish_status":"0","recid":"23806","relation_version_is_last":true,"title":["化合物半導体ZnSeへのIn拡散 - 1"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-05-16T00:36:55.693299+00:00"}