@article{oai:nagasaki-u.repo.nii.ac.jp:00024418,
 author = {森村, 隆夫 and 羽坂, 雅之},
 issue = {65},
 journal = {長崎大学工学部研究報告, Reports of the Faculty of Engineering, Nagasaki University},
 month = {Jul},
 note = {The site occupation state of Mn atoms in a thermoelectric semiconductor Fe0.97Mn0.03Si2 of the β-FeSi2 structure was analyzed by measuring and calculating characteristic X-ray intensities at various electron incidence directions in a transmission electron microscope. The calculation was based on dynamical electron diffraction and inelastic scattering theories, and the calculated intensities were compared with the measured intensities. The intensities depended on the occupation site of Mn atoms and sample thickness. As a result, the distribution fractions of Mn atoms on Fe I, Fe II and Si sites were shown to be 0.434, 0.574 and -0.008, respectively., 長崎大学工学部研究報告 Vol.35(65), pp.120-126; 2005},
 pages = {120--126},
 title = {電子線チャンネリングX線分光法による熱電変換材料の結晶構造解析},
 volume = {36},
 year = {2005}
}