@inproceedings{oai:nagasaki-u.repo.nii.ac.jp:00005421,
 author = {Hariya, Akinori and Ishizuka, Yoichi and Matsuura, Ken and Yanagi, Hiroshige and Tomioka, Satoshi and Ninomiya, Tamotsu},
 book = {Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE},
 month = {},
 note = {In this paper, a proposed pulse width modulation (PWM) control method for the isolated current-mode resonant DC-DC converter with MHz level switching frequency is presented. The circuit topology is same as a conventional resonant converter with synchronous rectification and without any additional components. The control technique for the output voltage regulation is proposed with the unique PWM control for synchronously-rectifying switches. By using the transformer's leakage inductance and the PWM control, the boost conversion can be realized. In addition, to achieve the zero-voltage switching (ZVS) operation, phase-shift between primary and secondary-side switches is adapted. The ZVS operation can maintain for primary-side switches. In this paper, proposed technique for achieving stable ZVS operation has been discussed. Some experiments have been done with 5MHz isolated DC-DC converter which has Gallium Nitride field effect transistor (GaN-FET), and the total volume of the circuit is 16.14cm3. The data show that the maximum power efficiency is 89.4%., 29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2014; Fort Worth, TX; United States; 16 March 2014 through 20 March 2014, Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE, 6803494; 2014},
 pages = {1426--1432},
 publisher = {IEEE},
 title = {5MHz PWM-controlled current-mode resonant DC-DC converter with GaN-FETs},
 year = {2014}
}