@inproceedings{oai:nagasaki-u.repo.nii.ac.jp:00005764,
 author = {Hariya, Akinori and Yanagi, Hiroshige and Ishizuka, Yoichi and Matsuura, Ken and Tomioka, Satoshi and Ninomiya, Tamotsu},
 book = {2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA)},
 month = {},
 note = {In this paper, the method of the realization of a MHz level switching frequency DC-DC converter for high power-density is presented. For high power-density, Gallium Nitride field effect transistor (GaN-FET) and current-mode resonant DC-DC converter are adopted. In addition, the proposed pulse width modulation (PWM) control method which is suitable for the isolated current-mode resonant DC-DC converter operated at MHz level switching frequency, and the novel primary-side zero voltage switching (ZVS) turn on method for the proposed PWM control are presented. Some experiments have been done with 5MHz isolated DC-DC converter which has GaN-FET, and the total volume of the circuit is 16.14cm3. With the proposed PWM control method, input voltage range is 36-44V, and maximum load current range is 8A at Vi = 44V. The primary-side ZVS turn on is confirmed, and the maximum power-efficiency is 89.4%., 7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014; Hiroshima; Japan; 18 May 2014 through 21 May 2014, 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), pp.3630-3637; 2014},
 pages = {3630--3637},
 publisher = {IEEE},
 title = {5MHz PWM-controlled current-mode resonant DC-DC converter using GaN-FETs},
 year = {2014}
}