{"created":"2023-05-15T16:33:30.295407+00:00","id":5764,"links":{},"metadata":{"_buckets":{"deposit":"37838ca0-def8-4cda-bc1c-6f4a5a5f4aad"},"_deposit":{"created_by":2,"id":"5764","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"5764"},"status":"published"},"_oai":{"id":"oai:nagasaki-u.repo.nii.ac.jp:00005764","sets":["14:65"]},"author_link":["24793","24797","24796","24798","24795","24794"],"item_9_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2014","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"3637","bibliographicPageStart":"3630","bibliographic_titles":[{"bibliographic_title":"2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA)"}]}]},"item_9_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In this paper, the method of the realization of a MHz level switching frequency DC-DC converter for high power-density is presented. For high power-density, Gallium Nitride field effect transistor (GaN-FET) and current-mode resonant DC-DC converter are adopted. In addition, the proposed pulse width modulation (PWM) control method which is suitable for the isolated current-mode resonant DC-DC converter operated at MHz level switching frequency, and the novel primary-side zero voltage switching (ZVS) turn on method for the proposed PWM control are presented. Some experiments have been done with 5MHz isolated DC-DC converter which has GaN-FET, and the total volume of the circuit is 16.14cm3. With the proposed PWM control method, input voltage range is 36-44V, and maximum load current range is 8A at Vi = 44V. The primary-side ZVS turn on is confirmed, and the maximum power-efficiency is 89.4%.","subitem_description_type":"Abstract"}]},"item_9_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014; Hiroshima; Japan; 18 May 2014 through 21 May 2014","subitem_description_type":"Other"}]},"item_9_description_63":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), pp.3630-3637; 2014","subitem_description_type":"Other"}]},"item_9_publisher_33":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_9_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1109/IPEC.2014.6870020","subitem_relation_type_select":"DOI"}}]},"item_9_relation_9":{"attribute_name":"ISBN","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"9781479927050","subitem_relation_type_select":"ISBN"}}]},"item_9_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"c 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works."}]},"item_9_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hariya, Akinori"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yanagi, Hiroshige"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ishizuka, Yoichi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Matsuura, Ken"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tomioka, Satoshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ninomiya, Tamotsu"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-12-21"}],"displaytype":"detail","filename":"IPEC-Hiroshima2014_6870020.pdf","filesize":[{"value":"713.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"IPEC-Hiroshima2014_6870020.pdf","url":"https://nagasaki-u.repo.nii.ac.jp/record/5764/files/IPEC-Hiroshima2014_6870020.pdf"},"version_id":"94bb6327-68cd-4a2e-b695-0eb08cd84393"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Current-Mode Resonant DC-DC Converter","subitem_subject_scheme":"Other"},{"subitem_subject":"GaN-FET","subitem_subject_scheme":"Other"},{"subitem_subject":"High Switching Frequency","subitem_subject_scheme":"Other"},{"subitem_subject":"PWM Control","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"5MHz PWM-controlled current-mode resonant DC-DC converter using GaN-FETs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"5MHz PWM-controlled current-mode resonant DC-DC converter using GaN-FETs"}]},"item_type_id":"9","owner":"2","path":["65"],"pubdate":{"attribute_name":"公開日","attribute_value":"2014-11-07"},"publish_date":"2014-11-07","publish_status":"0","recid":"5764","relation_version_is_last":true,"title":["5MHz PWM-controlled current-mode resonant DC-DC converter using GaN-FETs"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-05-16T02:59:00.047017+00:00"}