{"created":"2023-05-15T16:34:37.650316+00:00","id":7303,"links":{},"metadata":{"_buckets":{"deposit":"8e77373d-f300-4b7a-a7dc-9670a2104540"},"_deposit":{"created_by":2,"id":"7303","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"7303"},"status":"published"},"_oai":{"id":"oai:nagasaki-u.repo.nii.ac.jp:00007303","sets":["18:105:369:519"]},"author_link":["30688","30687"],"item_3_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Nondestructive Internal Observation of MOS-LSI Designed by 0.8μm Rule as a Specimen Using Electron-Acoustic Microscopy"}]},"item_3_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1997-02-28","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"46","bibliographicPageStart":"41","bibliographicVolumeNumber":"56","bibliographic_titles":[{"bibliographic_title":"長崎大学教育学部自然科学研究報告"},{"bibliographic_title":"Science bulletin of the Faculty of Education, Nagasaki University","bibliographic_titleLang":"en"}]}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Nondestructive internal observation of a MOS (metal-oxide-semiconductor) LSI chip designed by 0.8μm rule was carried out by electron-acoustic microscopy (EAM). The LSI chip as a specimen was uncovered and the passivated film on the chip was etched off by a dry etching method, keeping the chip mounted on a ceramic package (50×50×5mm3). The EA signal generated by irradiation of a chopped electron beam was picked up by a PZT detector attached, interposed by the package, to the back of the LSI chip specimen and was amplified using a lock-in amplifier. Thus sample prerpared can be measured SEM mode images, EAM mode images and electrical properties of the device, nondestructively. The results were under: (A) The EBIC (electron beam induced current) images and the SEM images are not the same from images of one flame scan, (B) new findings of internal structure of the chip are obtained from the both images. (C) The observable depth (tx) was proportionally related to the electron range (Re).","subitem_description_type":"Abstract"},{"subitem_description":"電子線超音波顕微鏡 (EAM) を用いて,MOS(metal-oxide-semiconductor)-LSI 試料の非破壊 ・ 内部観察を行った。試料LSIチップは0.8μmルールで製作されたMOS型素子で構成されたTEGである。セラミック・パッケージ (50×50×5mm3) の金属カバーを取り外し,チップはパッケージにマウントされたまま,チップ表面のパッシペイト・フィルムをドライ ・ エッチ法で除去した。試料 LSI チップの直下で,厚さ 5㎜ のセラミック ・パッケージを介した裏面にPZT検出器を取り付け音波信号を検出した。このように試料を準備することにより,SEM モード像,EAM モード像に加え,LSI の電気特性の測定も可能である。実験の結果,以下のことが分かった。 (A) 1画面内で同一場所でEAM像と電子線励起電流 (EBIC) 像とが異なり,EA信号と EBIC信号が異なるものであることが分かった。(B)EBIC像と EAM観察とを併用する事で,デバイスの内部構造に関する新たな知見が非破壊で得られる。(C)観察可能深さ (tx) はエレクトロンレンジ (Re) に比例している。","subitem_description_type":"Abstract"}]},"item_3_description_64":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"長崎大学教育学部自然科学研究報告. vol.56, p.41-46; 1997","subitem_description_type":"Other"}]},"item_3_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"30688","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Takenoshita, Hiroshi"}]}]},"item_3_publisher_33":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"長崎大学教育学部"}]},"item_3_relation_29":{"attribute_name":"論文ID（NAID）","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"110000293973","subitem_relation_type_select":"NAID"}}]},"item_3_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00178280","subitem_source_identifier_type":"NCID"}]},"item_3_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0386443X","subitem_source_identifier_type":"ISSN"}]},"item_3_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"竹野下, 寛"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-12-21"}],"displaytype":"detail","filename":"kyoikuS56_041.pdf","filesize":[{"value":"1.9 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kyoikuS56_041.pdf","url":"https://nagasaki-u.repo.nii.ac.jp/record/7303/files/kyoikuS56_041.pdf"},"version_id":"b122dbaa-c75d-4c87-a13a-7d44e567b2aa"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"0.8μmル-ルで製作されたMOS-LSI試料の電子線音波顕微鏡による非破壊・内部観察","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"0.8μmル-ルで製作されたMOS-LSI試料の電子線音波顕微鏡による非破壊・内部観察"}]},"item_type_id":"3","owner":"2","path":["519"],"pubdate":{"attribute_name":"公開日","attribute_value":"2013-06-06"},"publish_date":"2013-06-06","publish_status":"0","recid":"7303","relation_version_is_last":true,"title":["0.8μmル-ルで製作されたMOS-LSI試料の電子線音波顕微鏡による非破壊・内部観察"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-05-16T02:27:21.651568+00:00"}