@article{oai:nagasaki-u.repo.nii.ac.jp:00007735,
 author = {Hirose, Masami and Furuya, Yoshio},
 journal = {長崎大学教育学部自然科学研究報告, Science bulletin of the Faculty of Education, Nagasaki University},
 month = {Feb},
 note = {Vapor growth of SnO2 single crystals, belonging to rutile-type crystals, has tried by the reaction of SnI4 vapor with O2 gas or H2O vapor. SnO2 single crystals more easily crystallized by hydrolysis than by oxidation of SnI4 , and the optimum temperature range of the growth region was between 1200℃ and 1250℃ in the oxidation ane between 1100℃ and 1150℃ in the hydrolysis, respectively. From the detail observations of the characteristic crystals grown by the hydrolysis, it was made clear that the leaf-type elongated by the growth of the hydrolysis, it was made clear that the leaf-type elongated by the growth of <110> needles and thickened by the deposition and diffusion on the surfaces succeeded to the elongating growth, that the pyramid-type elongated and thickened by the two dimensional layer growth and that the plate-type thickened by the two dimensional layer growth. The leaf and pyramid-types tended to crystallize to an octahedron consisting of the {101} and {011} facets though their growth mechanisms were different., 長崎大学教育学部自然科学研究報告. vol.32, p.21-35; 1981},
 pages = {21--35},
 title = {Vapor Growth of SnO2 Single Crystals From SnI4 and their Growth Mechanisms},
 volume = {32},
 year = {1981}
}