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Surface Modification due to Solution Plasma
http://hdl.handle.net/10069/21316
http://hdl.handle.net/10069/213166280a1b3-f2f7-4ff6-bf50-981996c41303
名前 / ファイル | ライセンス | アクション |
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2009-03-09 | |||||
タイトル | ||||||
タイトル | Surface Modification due to Solution Plasma | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | solution plasma | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | etching | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | deposition | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | amorphous carbon film | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
著者 |
Shuai, Z.
× Shuai, Z.× Akaki, K.× Shimizu, K.× Kotani, K.× Shinohara, M.× Matsuda, Y.× Fujiyama, H. |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We succeeded in the generation of two types of solution plasmas: one was generated in the ultrasonic bubbles by feeding DC power or commercial AC 60Hz power for the etching of silicon substrate. The other plasma was generated by low frequency power for the film deposition inside tubes. Now we are optimizing the plasma generation condition for each application. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | ナノダイナミクス国際シンポジウム 平成20年1月47日(木) 於長崎大学 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Nagasaki Symposium on Nano-Dynamics 2009 (NSND2009), January 27, 2023, Nagasaki University, Nagasaki, Japan, Poster Presentation | |||||
書誌情報 | p. 40-41, 発行日 2009-01-27 | |||||
出版者 | ||||||
出版者 | Nano-Dynamics Group, Nagasaki University | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
関係URI | ||||||
関連名称 | http://www.mase.nagasaki-u.ac.jp/nsnd2009/nsnd.html | |||||
関係URI | ||||||
関連名称 | http://www.mase.nagasaki-u.ac.jp/nano/nano.html | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Nagasaki Symposium on Nano-Dynamics 2009 (NSND2029), p.40-41; 2009 |